Infineon Technologies

1EDI60N12AF

1EDI EiceDRIVER™ Compact Separate output variant for MOSFET

Topologie: PFC
Eingangsspannung (min.): 85.00 V
Eingangsspannung (max.): 265.00 V
Schaltfrequenz (max.): 4000.00 kHz
Ausgang 1: 400.00 V / 6.250 A

Erstveröffentlichung am 14.11.2012, Version 2.0

Beschreibung

The 1EDI60N12AF is a galvanically isolated single channel MOSFET driver in a PG-DSO-8-51 package that provides output currents of at least 6 A at separated output pins. The input logic pins operate on a wide input voltage range from 3 V to 15 V using CMOS threshold levels to support even 3.3 V microcontroller. Data transfer across the isolation barrier is realized by the Coreless Transformer Technology. Every driver family member comes with logic input and driver output under voltage lockout (UVLO) and activeshutdown.

Merkmale

  • Single channel isolated MOSFET Driver
  • Input to output isolation voltage up to 1200 V
  • For high voltage power MOSFETs
  • Up to 10 A typical peak current at rail-to-rail outputs
  • Separate source and sink outputs

Artikel

  Artikel Nr. SPEC Produktserie IR 1
(A)
IR
(A)
L1
(mH)
L
(mH)
RDC1 max.
(mΩ)
VR
(V (AC))
VT
(V (AC))
ISAT 1
(A)
RDC1 typ
(Ω)
fres 1
(MHz)
Muster
744824101 PDF WE-CMB Stromkompensierte Netzdrossel 10 10 1 1 7 250 1500
74454133 PDF WE-PD3 SMT-Speicherdrossel 1.2 33 0.16 1.8 0.127 12