Enhancement Mode Power Transistor

Topologie: Other


Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral devicestructure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.


  • Ultra High Efficiency
  • Ultra Low RDS(on)
  • Ultra low QG
  • Ultra small footprint


  Artikel Nr. SPEC Produktserie Pins P
Gender Typ Montageart IR 1
(V (AC))
PCB/Kabel/Panel Kontaktwiderstand
Tol. R L
Verpackung Muster
645002114822 PDF WR-WTB 3.96 mm Male Vertical Locking Header 2 3.96 Männlich Vertikal THT 7 250 PCB 20 max. 7.92 Beutel

Weitere Anwendungen und Artikel von Würth Elektronik zu diesem IC

  • EPC2014
    Topologie: Buck, Eingangsspannung (min.): 8.00 V, Eingangsspannung (max.): 19.00 V, Ausgang 1: 1.20 V / 18.000 A