EPC

EPC2023
Demoboard LMG5200POLEVM-10A

General TI High Voltage Evaluation User Safety Guidelines

Topologie: Half-Bridge
Eingangsspannung (min.): 36.00 V
Eingangsspannung (max.): 75.00 V
Ausgang 1: 0.50 V / 50.000 A

Erstveröffentlichung am 16.08.2017, Version D

Beschreibung

The LMG5200POLEVM-10 EVM is designed to evaluate the LMG5200 GaN power stage and the TPS53632G half-bridge point-of-load controller in a 48-V to 1-V applicationThis EVM implements the 48- V to 1-V converter as a single-stage hard-switched half-bridge with current-doubler rectifierThis topology efficiently supports a high step-down ratio while providing significant output current and fast transient responseThe TPS53632G controller uses a D-CAP+ hysteretic control architecture to achieve superior transient responseThe TPS53632G is a variant of the TPS53632 controller, modified to support the half-bridge topology used in this EVMThe LMG5200 is an 80-V, 10-A half-bridge power stage using gallium-nitride (GaN) transistorsGaN offers superior switching performance to traditional silicon MOSFETs due to its lack of reverse-recovery effect and reduced input and output capacitanceBy using a GaN module, this application achieves high efficiency while operating in a hard-switched configurationThis EVM guide describes correct operation and measurement of the EVM, as well as the EVM construction and typical performance

Artikel

  Artikel Nr. SPEC Produktserie L
(nH)
LR
(nH)
IR
(A)
ISAT
(A)
RDC
(mΩ)
fres
(MHz)
Material λDom typ.
(nm)
Farbe λPeak typ.
(nm)
IV typ.
(mcd)
VF typ.
(V)
Chiptechnologie 50% typ.
(°)
Muster
744308025 PDF WE-HCM SMT-Hochstrominduktivität 250 246 25 44 0.37 40 MnZn
150060GS75000 PDF WL-SMCW SMT Mono-color Chip LED Waterclear 525 Grün 515 430 3.2 InGaN 140

Weitere Anwendungen und Artikel von Würth Elektronik zu diesem IC

  • EPC2023
    Topologie: Half-Bridge, Eingangsspannung (min.): 10.00 V, Eingangsspannung (max.): 60.00 V, Ausgang 1: 5.00 V / 10.000 A