Demoboard EPC9079

Topologie: Half-Bridge
Eingangsspannung (min.): 160.00 V
Eingangsspannung (max.): 160.00 V
Ausgang 1: 200.00 V / 6.000 A

Erstveröffentlichung am 30.05.2017, Version 1.0


The EPC9079 development board (figure 1) is a 200 V maximum device voltage, 6 A maximum output current, half bridge with onboard gate drives, featuring two EPC2046 enhancement mode (eGaN®) field effect transistors (FETs). The purpose of this development board is to simplify the evaluation process of the EPC2046 eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter. The EPC9079 development board is 1.5” x 2” and contains two EPC2046 eGaN FETs in a half bridge configuration. As supplied, the high side gate drive uses a digital isolator and both FETs use the Texas Instruments UCC27611 gate driver. The board also contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation, as well as the option to add trimmer resistors for adjustable deadtime, to provide separate high and low side inputs, and to add an isolator for the low side gate drive. A block diagram of the circuit is given in figure 2. For more information on the EPC2046 please refer to the datasheet available from EPC at www.epc-co.com. The datasheet should be read in conjunction with this quick start guide.


  Artikel Nr. SPEC Produktserie Pins Reihen Gender Typ IR
Verpackung Muster
61300111121 PDF WR-PHD 2.54 mm THT Pin Header 1 Single Pin Header Gerade 3 Beutel
61300211121 PDF WR-PHD 2.54 mm THT Pin Header 2 Single Pin Header Gerade 3 Beutel