Development Board EPC9002 Quick Start Guide

Topologie: Half-Bridge
Ausgang 1: 100.00 V / 10.000 A


The EPC9002 development board is a 100 V maximum device voltage, 10 A maximum output current, half bridge with onboard gate drives, featuring the EPC2001 enhancement mode (eGaN®) field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2001 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.The EPC9002 development board is 2” x 1.5” and contains two EPC2001 eGaN FET in a half bridge configuration using Texas Instruments LM5113 gate driver, supply and bypass capacitors.The board contains all critical components and layout for optimalswitching performance. There are also various probe points to facilitatesimple waveform measurement and efficiency calculation.A complete block diagram of the circuit is given in Figure 1.For more information on the EPC2001s eGaN FET please refer to the data sheet available from EPC at www.epc-co.com. The datasheet should be read in conjunction with this quick start guide


  Artikel Nr. SPEC Produktserie L
RDC max.
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Material LR
7443340100 PDF WE-HCC SMT-Hochstrominduktivität 1 17 24 3.9 3.6 Ferrite 0.97 147